Graphene Saturable Absorber Mirror for Mode-Locked Orange Pulse Laser

Journal of Russian Laser Research - We demonstrate a passively-mode-locked Pr3+: LuLiF4 laser operated at the 604 nm orange wave-length, using monolayer graphene as a saturable absorber. The...     

Reduced Density Matrix and Quantum Correlation in Two-Qubit Quantum Rabi Model

International Journal of Theoretical Physics - In this work, we give an analytical derivation of the reduced density matrix between two qubits in a cavity field, which is described by the quantum...     

Developing Flexible Quinacridone-Derivatives-Based Photothermal Evaporaters for Solar Steam and Thermoelectric Power Generation

Solar-driven interfacial vaporization by localizing solar-thermal energy conversion to the air−water interface has attracted tremendous attention. In the process of converting solar energy into heat energy, photothermal materials play an essential role. Herein, a flexible solar-thermal material di-cyan substituted 5,12-dibutylquinacridone (DCN−4CQA)@Paper was developed by coating photothermal quinacridone derivatives on the cellulose paper. The DCN−4CQA@Paper combines desired chemical and physical properties, broadband light-absorbing, and shape-conforming abilities that render efficient photothermic vaporization. Notably, synergetic coupling of solar-steam and solar-electricity technologies by integrating DCN−4CQA@Paper and the thermoelectric devices is realized without trade-offs, highlighting the practical consideration toward more impactful solar heat exploitation. Such solar distillation and low-grade heat-to-electricity generation functions can provide potential opportunities for fresh water and electricity supply in off-grid or remote areas.     

硅和锗纳米线的原子排布和电荷分布的密度泛函紧束缚方法研究

低维硅锗材料是制备纳米电子器件的重要候选材料，是研发高效率、低能耗和超高速新一代纳米电子器件的基础材料之一，有着潜在的应用价值。采用密度泛函紧束缚方法分别对厚度相同、宽度在0.272 nm~0.554 nm之间的硅纳米线和宽度在0.283 nm~0.567 nm之间的锗纳米线的原子排布和电荷分布进行了计算研究。硅、锗纳米线宽度的改变使原子排布，纳米线的原子间键长和键角发生明显改变。纳米线表层结构的改变对各层内的电荷分布产生重要影响。纳米线中各原子的电荷转移量与该原子在表层内的位置相关。纳米线的尺寸和表层内原子排列结构对体系的稳定性产生重要影响。     

Preparation of Highly Stable and Photoluminescent Cadmium-Free InP/GaP/ZnS Core/Shell Quantum Dots and Application to Quantitative Immunoassay

Indium phosphide (InP) quantum dots (QDs) are ideal substitutes for widely used cadmium-based QDs and have great application prospects in biological fields due to their environmentally benign properties and human safety. However, the synthesis of InP core/shell QDs with biocompatibility, high quantum yield (QY), uniform particle size, and high stability is still a challenging subject. Herein, high quality (QY up to 72%) thick shell InP/GaP/ZnS core/shell QDs (12.8 ± 1.4 nm) are synthesized using multiple injections of shell precursor and extension of shell growth time, with GaP serving as the intermediate layer and 1-octanethiol acting as the new S source. The thick shell InP/GaP/ZnS core/shell QDs still keep high QY and photostability after transfer into water. InP/GaP/ZnS core/shell QDs as fluorescence labels to establish QD-based fluorescence-linked immunosorbent assay (QD-FLISA) for quantitative detection of C-reactive protein (CRP), and a calibration curve is established between fluorescence intensity and CRP concentrations (range: 1–800 ng mL⁻¹, correlation coefficient: R² = 0.9992). The limit of detection is 2.9 ng mL⁻¹, which increases twofold compared to previously reported cadmium-free QD-based immunoassays. Thus, InP/GaP/ZnS core/shell QDs as a great promise fluorescence labeling material, provide a new route for cadmium-free sensitive and specific immunoassays in biomedical fields.     

烧结温度对Cao.9(NaCe)0.05Bi2Nb2O9无铅压电陶瓷性能的影响

采用传统固相反应法制备了Ca0.9(NaCe)0.05Bi2 Nb2 O9铋层状无铅压电陶瓷.采用XRD、SEM、EDS及相关电学性能测试系统表征了样品的晶体结构、断面形貌、元素组成以及介电、压电、铁电等性能,探究不同烧结温度对于陶瓷性能的影响.结果表明:当烧结温度为1150℃时,样品的晶体结构单一均匀,呈现片层状结构,致密性较好,压电常数高达17 pC/N,介电损耗仅为0.42;,居里温度为908℃,并且具有很好的温度稳定性,说明固相反应法制备的Ca0.9(NaCe)0.05Bi2Nb2O9压电陶瓷最佳烧结温度为1150℃.     

Formation of Azulene-Embedded Nanographene: Naphthalene to Azulene Rearrangement During the Scholl Reaction

Incorporation of a non-hexagonal ring into a nanographene framework can lead to new electronic properties. During the attempted synthesis of naphthalene-bridged double [6]helicene and heptagon-containing nanographene by the Scholl reaction, an unexpected azulene-embedded nanographene and its triflyloxylated product were obtained, as confirmed by X-ray crystallographic analysis and 2D NMR spectroscopy. A 5/7/7/5 ring-fused substructure containing two formal azulene units is formed, but only one of them shows an azulene-like electronic structure. The formation of this unique structure is explained by arenium ion mediated 1,2-phenyl migration and a naphthalene to azulene rearrangement reaction according to an in-silico study. This report represents the first experimental example of the thermodynamically unfavorable naphthalene to azulene rearrangement and may lead to new azulene-based molecular materials.     

A generalized super AKNS hierarchy associated with orthosymplectic Lie superalgebra OSP(2,2) and its super bi-Hamiltonian structures

For the orthosymplectic Lie superalgebra $\text{◂⋅▸}OSP(2,2)$, we choose a set of basis matrices. A linear combination of those basis matrices presents a spatial spectral matrix. The compatible condition of the spatial part and the corresponding temporal parts of the spectral problem leads to a generalized super AKNS (GSAKNS) hierarchy. By making use of the supertrace identity, the obtained GSAKNS hierarchy can be written as the super bi-Hamiltonian structures.